2N5551 features switching and amplification in high voltage applications such as telephony low current(max. 600ma) high voltage(max.180v) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6v collector current-continuous i c 0.6 a collector power dissipation pc 625 mw junction and storage temperature t j ,t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100 a, i e = 0 180 v collector-emitter breakdown voltage * v ceo i c =1.0ma,i b = 0 160 v emitter-base breakdown voltage v ebo i e =10a,i c =0 6 v collector cutoff current i cbo v cb = 120 v, i e = 0 50 na emitter cutoff current i ebo v eb =4.0v,i c = 0 50 na i c =1.0ma,v ce =5v 80 i c =10ma,v ce = 5 v 80 250 i c =50ma,v ce =5v 30 i c =10ma,i b = 1 ma 0.15 i c =50ma,i b =5ma 0.2 i c =10ma,i b =1ma 1.0 i c =50 ma, i b =5ma 1.0 transiston frequency f t v ce =10v,i c =10ma,f=100mhz 100 300 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 6 pf input capacitance c ib v be =0.5v,i c =0,f=1mhz 20 pf noise figure nf v ce =5v,i c =0.25ma,f=10hz to 15.7khz,r s =1k 8db * pulse test: pulse width = 300 s, duty cycle=2.0%. base-emitter saturation voltage * v be(sat) v h fe dc current gain * collector-emitter saturation voltage * v ce(sat) v s m d ty p e t r a n s i s t o r s s m d ty p e t r a n s i s t o r s s m d ty p e i c d i p ty p e t r a n s i s t o r product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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